to C 92 1. emitter 2. collector 3. base jiangsu changjiang electron ics technology co., l t d to-92 plastic-encapsulate t r ansistors 2SC1318 transistor (npn) features z low collecto r to emitter saturation voltage v ce(sat) z complementary pair with 2sa720 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base vo ltage 60 v v ce o collector-emitter volt age 50 v v eb o emitter-base voltag e 7 v i c collector current 500 ma p c collector powe r dissip ation 625 mw r ja thermal resistance fr om jun ction to ambient 200 / w t j junction temperature 150 t st g storage te mpe rature -55~+150 www.cj-elec.com 1 e ,aug,2017 ordering inform a t ion part nu mb er pack ag e packin g meth o d pack qu an tity t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box 2SC1318 2SC1318 -ta equivalent circuit solid dot=green molding compound device, ///, . c1318,! - . if none,the normal device 1 c1318 xxx
www.cj-elec.com e,aug,2017 a t =25 unless otherwise specified pa rameter symbol t est conditions min typ max unit collector-b ase b reakdown voltage v (br)cbo i c = 0.01ma,i e =0 60 v collector-emitter b r eakdown voltage v (br)ceo i c =10ma,i b =0 50 v emitter-base b reakdown voltage v (br) ebo i e =0.01ma,i c =0 7 v collector cu t-o ff current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =6v,i c =0 0.1 a h fe(1) v ce =10v, i c =150ma 85 340 dc current g a in h fe(2) v ce =10v, i c =500ma 40 collector-emitter satu r ation voltage v ce(sat ) i c =300ma,i b =30ma 0.6 v base-emitter satu r ation voltage v be (sat) i c =300ma,i b =30ma 1.5 v collector o u tput capacitance c ob v cb =10v,i e =0, f=1mhz 15 pf tran s ition frequency f t v ce =10v,i c =50ma, f=200mhz 200 mhz classification of h fe(1) rank q r s range 85-1 70 120-240 170-340
1 10 100 10 100 1000 0.1 1 10 100 0 200 400 600 800 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 0.1 1 10 100 10 100 11 01 0 0 10 100 1000 0.1 1 10 1 10 100 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 0 4 8 12 16 20 24 0 50 100 150 200 250 500 i c f t ?? commo n em itter v ce =10v t a =25 collector current i c (ma) transi tion fre quency f t (mhz) 500 =10 i c v besat ?? base-emitt e r saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient t e mperature t a ( ) collector power dissipation p c (mw) 500 500 t a =100 t a =25 =10 i c v cesat ? ? collector-emitter saturation voltag e v cesa t (mv) collector curremt i c (ma) 300 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common em itter v ce = 10v 30 200 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ? ? c ob c ib reverse voltag e v ( v) capacitance c (p f ) collector current i c (ma) base-emm i ter voltage v be (v) i c ?? v be t a = 2 5 t a = 1 0 0 commo n em itter v ce =10v stat i c characteristic common e mitter t a =25 1ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.9ma 0.2ma i b =0.1ma collector current i c (ma) collector-em itter voltage v ce (v) typical characteristics www.cj-elec.com 3 e,aug,2017
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com 4 e,aug,2017
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 5 e,aug,2017
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